Perspective of Buried Oxide Thickness Variation on Triple Metal-Gate (TMG) Recessed-S/D FD-SOI MOSFET
Recently, Fully-Depleted Silicon on Insulator (FD-SOI) MOSFETs have been accepted as a favourable technology beyond nanometer nodes, and the technique of Recessed-Source/Drain (Re-S/D) has made it more immune in regards of various performance factors. However, the proper selection of Buried-Oxide (B...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2018-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/2797 |