Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials

The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (Vt) variability, a...

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Bibliographic Details
Main Authors: Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara
Format: Article
Language:English
Published: MDPI AG 2014-06-01
Series:Journal of Low Power Electronics and Applications
Subjects:
charge trapping (CT)
flash memory
silicon on insulator (SOI)
FinFET
blocking layer
high-k metal gate
variability
Online Access:http://www.mdpi.com/2079-9268/4/2/153

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http://www.mdpi.com/2079-9268/4/2/153

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