Study on the Effect of Nano-SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process
Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO2 grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2006-01-01
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Series: | Journal of Nanomaterials |
Online Access: | http://dx.doi.org/10.1155/JNM/2006/25467 |