Study on the Effect of Nano-SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO2 grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the...

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Bibliographic Details
Main Authors: Liu Yuling, Wang Juan, Sun Ming, Liu Chenglin
Format: Article
Language:English
Published: Hindawi Limited 2006-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/JNM/2006/25467