Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs
This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition....
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IFSA Publishing, S.L.
2014-05-01
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| Series: | Sensors & Transducers |
| Subjects: | |
| Online Access: | http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_514.pdf |