Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser
In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2018-10-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | http://www.mdpi.com/2076-3417/8/10/1842 |