Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

Abstract An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper. On-resistance analytical model for the proposed LDMOS is built to provide an in-d...

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Bibliographic Details
Main Authors: Zhuo Wang, Zhangyi’an Yuan, Xin Zhou, Ming Qiao, Zhaoji Li, Bo Zhang
Format: Article
Language:English
Published: SpringerOpen 2019-01-01
Series:Nanoscale Research Letters
Subjects:
Enhanced dual-gate
Lateral double-diffused metal-oxide-semiconductor transistor (LDMOS)
Partial buried layer
Specific on-resistance
Online Access:http://link.springer.com/article/10.1186/s11671-019-2866-5

Internet

http://link.springer.com/article/10.1186/s11671-019-2866-5

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