Thermal Analysis of Power Semiconductor Device in Steady-State Conditions
Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which su...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-12-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/13/1/103 |