Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

Numerical Study of the Coupling of Sub-Terahertz Radiation to n-Channel Strained-Silicon MODFETs

This paper reports on a study of the response of a T-gate strained-Si MODFETs (modulation-doped field-effect transistor) under continuous-wave sub-THz excitation. The sub-THz response was measured using a two-tones solid-state source at 0.15 and 0.30 THz. The device response in the photovoltaic mode...

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Bibliographic Details
Main Authors: Jaime Calvo-Gallego, Juan A. Delgado-Notario, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Abdelaziz El Moussaouy, Yahya M. Meziani
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Sensors
Subjects:
terahertz
SiGe
silicon
strained-Si
MODFET
electromagnetic simulation
Online Access:https://www.mdpi.com/1424-8220/21/3/688

Internet

https://www.mdpi.com/1424-8220/21/3/688

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