High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration
In this paper, we present thin-film transistors (TFTs) with a zinc-tin-oxide (ZTO) layer achieved through magnetron co-sputtering. Amorphous ZTO TFTs with an Sn concentration of 2.49%, 6.95%, 7.11%, 11.95%, and 16.47% were fabricated, to investigate the effect of low-doped Sn. With a doping of 2.49%...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8723443/ |