Pretreatment Effects on High-k/In<sub>x</sub>Ga<sub>1–x</sub>As MOS Interface Properties and Their Physical Model

Pretreatment Effects on High-k/In<sub>x</sub>Ga<sub>1–x</sub>As MOS Interface Properties and Their Physical Model

The electrical and physical properties of atomic layer deposition high-k (Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub>) /In<sub>x</sub>Ga<sub>1-x</sub>As (x = 0.53, 0.7, and 1) MOS interfaces with (NH<sub>4</sub>)S<sub>...

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Bibliographic Details
Main Authors:	Chiaki Yokoyama, Chi-Yu Chang, Mitsuru Takenaka, Shinichi Takagi
Format:	Article
Language:	English
Published:	IEEE 2018-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	BHF <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">C-V</italic> <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">D</italic>it HF InAs InGaAs
Online Access:	https://ieeexplore.ieee.org/document/8060502/

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