High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air
In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs). The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magn...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5007131 |