Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak al...

Full description

Bibliographic Details
Main Authors: Pavel Kirilenko, Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Crystals
Subjects:
InGaN
light-emitting diode
localized emission
electroluminescence mapping
multimicroscopy
Online Access:https://www.mdpi.com/2073-4352/11/9/1123

Internet

https://www.mdpi.com/2073-4352/11/9/1123

Similar Items