Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs

Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has...

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Bibliographic Details
Main Authors: Juan A. Delgado-Notario, Jaime Calvo-Gallego, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Yahya M. Meziani
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Applied Sciences
Subjects:
Terahertz
SiGe
MODFET
silicon
electromagnetic simulation
Online Access:https://www.mdpi.com/2076-3417/10/17/5959

Internet

https://www.mdpi.com/2076-3417/10/17/5959

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