Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor

In this study, we implemented a depletion (D)-mode gallium nitride high electron mobility transistor (GaN HEMT, which has the advantage of having no body diode) in a class-E amplifier. Instead of applying a zero voltage switching control, which requires high frequency sampling at a high voltage (>...

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Bibliographic Details
Main Authors: You-Chen Weng, Chih-Chiang Wu, Edward Yi Chang, Wei-Hua Chieng
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Energies
Subjects:
wireless power transfer
class-E amplifier
minimum power input control
D-mode
GaN HEMT
gate drive
Online Access:https://www.mdpi.com/1996-1073/14/8/2302

Internet

https://www.mdpi.com/1996-1073/14/8/2302

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