Direct observation of delithiation as the origin of analog memristance in LixNbO2
The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers re...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5108525 |
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doaj-415d9ee2895a4bc7bda8e73874e5680d2020-11-24T22:10:25ZengAIP Publishing LLCAPL Materials2166-532X2019-07-0177071103071103-610.1063/1.5108525007907APMDirect observation of delithiation as the origin of analog memristance in LixNbO2Sebastian A. Howard0Christopher N. Singh1Galo J. Paez2Matthew J. Wahila3Linda W. Wangoh4Shawn Sallis5Keith Tirpak6Yufeng Liang7David Prendergast8Mateusz Zuba9Jatinkumar Rana10Alex Weidenbach11Timothy M. McCrone12Wanli Yang13Tien-Lin Lee14Fanny Rodolakis15William Doolittle16Wei-Cheng Lee17Louis F. J. Piper18Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USAMaterials Science and Engineering, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USAThe Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USAThe Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USASchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USASchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAAdvanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USADiamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE, United KingdomArgonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439, USASchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USADepartment of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USAThe discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors.http://dx.doi.org/10.1063/1.5108525 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Sebastian A. Howard Christopher N. Singh Galo J. Paez Matthew J. Wahila Linda W. Wangoh Shawn Sallis Keith Tirpak Yufeng Liang David Prendergast Mateusz Zuba Jatinkumar Rana Alex Weidenbach Timothy M. McCrone Wanli Yang Tien-Lin Lee Fanny Rodolakis William Doolittle Wei-Cheng Lee Louis F. J. Piper |
| spellingShingle |
Sebastian A. Howard Christopher N. Singh Galo J. Paez Matthew J. Wahila Linda W. Wangoh Shawn Sallis Keith Tirpak Yufeng Liang David Prendergast Mateusz Zuba Jatinkumar Rana Alex Weidenbach Timothy M. McCrone Wanli Yang Tien-Lin Lee Fanny Rodolakis William Doolittle Wei-Cheng Lee Louis F. J. Piper Direct observation of delithiation as the origin of analog memristance in LixNbO2 APL Materials |
| author_facet |
Sebastian A. Howard Christopher N. Singh Galo J. Paez Matthew J. Wahila Linda W. Wangoh Shawn Sallis Keith Tirpak Yufeng Liang David Prendergast Mateusz Zuba Jatinkumar Rana Alex Weidenbach Timothy M. McCrone Wanli Yang Tien-Lin Lee Fanny Rodolakis William Doolittle Wei-Cheng Lee Louis F. J. Piper |
| author_sort |
Sebastian A. Howard |
| title |
Direct observation of delithiation as the origin of analog memristance in LixNbO2 |
| title_short |
Direct observation of delithiation as the origin of analog memristance in LixNbO2 |
| title_full |
Direct observation of delithiation as the origin of analog memristance in LixNbO2 |
| title_fullStr |
Direct observation of delithiation as the origin of analog memristance in LixNbO2 |
| title_full_unstemmed |
Direct observation of delithiation as the origin of analog memristance in LixNbO2 |
| title_sort |
direct observation of delithiation as the origin of analog memristance in lixnbo2 |
| publisher |
AIP Publishing LLC |
| series |
APL Materials |
| issn |
2166-532X |
| publishDate |
2019-07-01 |
| description |
The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors. |
| url |
http://dx.doi.org/10.1063/1.5108525 |
| work_keys_str_mv |
AT sebastianahoward directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT christophernsingh directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT galojpaez directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT matthewjwahila directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT lindawwangoh directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT shawnsallis directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT keithtirpak directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT yufengliang directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT davidprendergast directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT mateuszzuba directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT jatinkumarrana directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT alexweidenbach directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT timothymmccrone directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT wanliyang directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT tienlinlee directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT fannyrodolakis directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT williamdoolittle directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT weichenglee directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 AT louisfjpiper directobservationofdelithiationastheoriginofanalogmemristanceinlixnbo2 |
| _version_ |
1725808252968501248 |