Sharp Switching by Field-Effect Bandgap Modulation in All-Graphene Side-Gate Transistors
Graphene is a 2-D electronic material that has drawn intensive interest due to its high carrier mobility, film flexibility, and tunable bandgap. The unique bandgap modulation by the transverse electrical field in the graphene nanoribbon (GNR) offers new opportunity to pursue switches with steep subt...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7035031/ |