Remote Doping Effects of Indium–Gallium–Zinc Oxide Thin-Film Transistors by Silane-Based Self-Assembled Monolayers
Oxide thin-film transistors (TFTs), including indium–gallium–zinc oxide (IGZO) TFTs, have been widely investigated because of their excellent properties, such as compatibility with flexible substrates, high carrier mobility, and easy-to-fabricate TFT processes. However, to increase the use of oxide...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/5/481 |