The measurements of pulsed I–V-curves for silicon IMPATT diodes in the avalanche breakdown region
Some aspects of measurement of I–V-curves for IMPATT diodes are considered. There were determined the main parameters of the pulsed I–V-curves for IMPATT diodes: density of critical current, voltage step in the region of negative differential resistance and avalanche breakdown region. A method for d...
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| Format: | Article |
| Language: | English |
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Politehperiodika
2009-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2009/5_2009/pdf/09.zip |