Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Anisotropically biaxial strain in non-polar (112–0) plane In x Ga1−x N/GaN layers investigated by X-ray reciprocal space mapping

Abstract In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga1−x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x...

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Bibliographic Details
Main Authors: Guijuan Zhao, Huijie Li, Lianshan Wang, Yulin Meng, Zesheng Ji, Fangzheng Li, Hongyuan Wei, Shaoyan Yang, Zhanguo Wang
Format: Article
Language:English
Published: Nature Publishing Group 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-04854-8

Internet

https://doi.org/10.1038/s41598-017-04854-8

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