A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (Q) and gradient...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8506354/ |