A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (Q) and gradient...

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Main Authors:	Tao Tian, Sheng-Li Zhang, Yu-Feng Guo, Jun Zhang, David Z. Pan, Ke-Meng Yang
Format:	Article
Language:	English
Published:	IEEE 2019-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI)
Online Access:	https://ieeexplore.ieee.org/document/8506354/

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record_format	Article
spelling	doaj-42a379e7ba5e45bfbfcf7742447f34c92021-03-29T18:48:16ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-017626910.1109/JEDS.2018.28777658506354A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping LayerTao Tian0https://orcid.org/0000-0001-5297-3064Sheng-Li Zhang1https://orcid.org/0000-0002-5688-295XYu-Feng Guo2https://orcid.org/0000-0002-1490-986XJun Zhang3https://orcid.org/0000-0002-5688-295XDavid Z. Pan4https://orcid.org/0000-0002-5705-2501Ke-Meng Yang5https://orcid.org/0000-0003-2970-993XCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaIn this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (Q) and gradient (G) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager Q and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (Eoff) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the Eoff of the proposed device can reduce by 29.4% and 69.7% at 100 A·cm<sup>-2</sup> and 200 A·cm<sup>-2</sup>, respectively, when compared with UPB SOI LIGBT.https://ieeexplore.ieee.org/document/8506354/Variation of lateral doping (VLD)lateral insulated gate bipolar transistor (LIGBT)linear dopingturn-off losssilicon-on-insulator (SOI)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang
spellingShingle	Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer IEEE Journal of the Electron Devices Society Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI)
author_facet	Tao Tian Sheng-Li Zhang Yu-Feng Guo Jun Zhang David Z. Pan Ke-Meng Yang
author_sort	Tao Tian
title	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_short	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_full	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_fullStr	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_full_unstemmed	A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer
title_sort	new low turn-off loss soi lateral insulated gate bipolar transistor with buried variation of lateral doping layer
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2019-01-01
description	In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (Q) and gradient (G) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager Q and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (Eoff) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the Eoff of the proposed device can reduce by 29.4% and 69.7% at 100 A·cm<sup>-2</sup> and 200 A·cm<sup>-2</sup>, respectively, when compared with UPB SOI LIGBT.
topic	Variation of lateral doping (VLD) lateral insulated gate bipolar transistor (LIGBT) linear doping turn-off loss silicon-on-insulator (SOI)
url	https://ieeexplore.ieee.org/document/8506354/
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A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

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