Effect of surface charge self-organization on gate-induced 2D electron and hole systems
A simple model has been suggested for describing self-organization of localized charges and quantum scattering in undoped GaAs/AlGaAs structures with 2D electron or hole gas created by applying respective gate bias. It has been assumed that these metal / dielectric / undoped semicond...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2020-09-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/63361/download/pdf/ |