4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency
In this paper, a high-performance 4H-SiC separated absorption charge multiplication ultraviolet avalanche photodiode (APD) with low breakdown voltage is designed and fabricated. The room temperature dark current of the APD remains at 0.1 pA level ( 29 pA/ cm<sup>-2</sup>) when reverse bi...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7579614/ |