Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (E<sub>off</sub>) and turn-off time (T<sub>off</sub>). The electric...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9187894/ |