Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup

Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup

Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is very important for their practical application. This paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions. A high-current...

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Bibliographic Details
Main Authors: Shen Diao, Jun Sun, Ziwei Zhou, Zhenzhong Zhang, Adolf Schöner, Zedong Zheng, Weiwei He
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:Nanotechnology and Precision Engineering
Subjects:
SiC MOSFET
Short-circuit test
Failure analysis
Online Access:http://www.sciencedirect.com/science/article/pii/S2589554020300404

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http://www.sciencedirect.com/science/article/pii/S2589554020300404

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