The Challenges of Advanced CMOS Process from 2D to 3D

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumpt...

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Bibliographic Details
Main Authors: Henry H. Radamson, Yanbo Zhang, Xiaobin He, Hushan Cui, Junjie Li, Jinjuan Xiang, Jinbiao Liu, Shihai Gu, Guilei Wang
Format: Article
Language:English
Published: MDPI AG 2017-10-01
Series:Applied Sciences
Subjects:
Online Access:https://www.mdpi.com/2076-3417/7/10/1047