Interfacial Dipole Modulation Device With SiO<sub>X</sub> Switching Species
In recent years, substantial research efforts have been devoted toward the development of non-volatile memory devices (NVM). In this regard, devices utilizing interfacial dipole modulation (IDM) have been considered. However, the narrow memory window of current IDM stack structures (HfO<sub>2&...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9269423/ |