Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Interstitial copper‐doped edge contact for n‐type carrier transport in black phosphorus

Abstract Black phosphorus (BP) has been shown as a promising two‐dimensional (2D) material for electronic devices owing to its high carrier mobility. To realize complementary electronic circuits with 2D materials, it is important to fabricate both n‐type and p‐type transistors with the same channel...

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Bibliographic Details
Main Authors: Ziyuan Lin, Jingli Wang, Xuyun Guo, Jiewei Chen, Chao Xu, Mingqiang Liu, Bilu Liu, Ye Zhu, Yang Chai
Format: Article
Language:English
Published: Wiley 2019-06-01
Series:InfoMat
Subjects:
black phosphorus (BP)
carrier type
contact
doping
two‐dimensional (2D) materials
Online Access:https://doi.org/10.1002/inf2.12015

Internet

https://doi.org/10.1002/inf2.12015

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