Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique
<p class="ArticleAnnotation">The effect of the different regimes of heat treatment on the kinetics of electronic processes in silicon crystals doped with phosphorus impurity via the melt and by nuclear transmutation technique. The most significant influence of cooling under intermedi...
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2018-04-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/2343 |