H2O vapor assisted growth of β-Ga2O3 by MOCVD
The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition (MOCVD) was studied. Adding H2O vapor to oxygen was found to increase the surface roughness and decrease the carrier concentration but have no eff...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0011910 |