High-Pressure Oxidation on Ge: Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties
On the basis of thermodynamic and kinetic consideration of Ge-O system, high-pressure oxidation (HPO) on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved. It is found that the post oxidation annea...
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| Format: | Article |
| Language: | English |
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JommPublish
2020-06-01
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| Series: | Journal of Microelectronic Manufacturing |
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| Online Access: | http://www.jommpublish.org/p/54/ |