Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the ho...

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Bibliographic Details
Main Authors: Moonsang Lee, Hyunkyu Lee, Keun Man Song, Jaekyun Kim
Format: Article
Language:English
Published: MDPI AG 2018-07-01
Series:Nanomaterials
Subjects:
InGaN/GaN LED
freestanding GaN
forward leakage current
conduction mechanism
tunneling
Online Access:http://www.mdpi.com/2079-4991/8/7/543

Internet

http://www.mdpi.com/2079-4991/8/7/543

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