Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts
The ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-02-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/2/222 |