Ultra-Short Pulsed Laser Annealing Effects on MoS<sub>2</sub> Transistors with Asymmetric and Symmetric Contacts
The ultra-short pulsed laser annealing process enhances the performance of MoS<sub>2</sub> thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In...
Main Authors: | Hyeokjin Kwon, Seunghun Baik, Jae Eun Jang, Jaewon Jang, Sunkook Kim, Costas P. Grigoropoulos, Hyuk-Jun Kwon |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-02-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/8/2/222 |
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