Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Inkjet-Printed Top-Gate Thin-Film Transistors Based on InGaSnO Semiconductor Layer with Improved Etching Resistance

Inkjet-printed top-gate metal oxide (MO) thin-film transistors (TFTs) with InGaSnO semiconductor layer and carbon-free aqueous gate dielectric ink are demonstrated. It is found that the InGaO semiconductor layer without Sn doping is seriously damaged after printing aqueous gate dielectric ink onto i...

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Bibliographic Details
Main Authors: Siting Chen, Yuzhi Li, Yilong Lin, Penghui He, Teng Long, Caihao Deng, Zhuo Chen, Geshuang Chen, Hong Tao, Linfeng Lan, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Coatings
Subjects:
inkjet printing
InGaSnO
thin-film transistors
top gate
metal oxide
Online Access:https://www.mdpi.com/2079-6412/10/4/425

Internet

https://www.mdpi.com/2079-6412/10/4/425

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