Analysis and Modeling of Lateral Power Devices With Stepped Drift Region Thickness via Effective Concentration Profile Concept

Analysis and Modeling of Lateral Power Devices With Stepped Drift Region Thickness via Effective Concentration Profile Concept

Stepped drift region thickness technique alters the drift region doping dose and its distribution, and therefore modulates the device's off-state characteristics. However, due to the sophisticated structure of the 2-D stepped drift region, the conventional 2-D modeling method is too complicated...

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Bibliographic Details
Main Authors: Jun Zhang, Yu-Feng Guo, Chen-Yang Huang, Fang-Ren Hu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
1-D model
stepped drift region
effective doping
RESURF effect
breakdown voltage
Online Access:https://ieeexplore.ieee.org/document/8918240/

Internet

https://ieeexplore.ieee.org/document/8918240/

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