Effect of Source/Drain Lateral Straggle on Distortion and Intrinsic Performance of Asymmetric Underlap DG-MOSFETs
This paper presents a systematic study of the effect of source/drain (S/D) implant lateral straggle on the RF performance of the symmetric and asymmetric underlap double gate (UDG) MOSFET devices. The length of the underlap regions (L<sub>un</sub>) on each side of the gate is a critical...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6862860/ |