Direct to indirect band gap transition in two-dimensional germanium carbide through Si substitution
In this work, the structural, electronic and optical properties of Si substituted single-layer GeC are studied by performing density functional theory calculations. Single-layer GeC possesses a direct band gap of 2.11 eV at the K point. The direct band gap feature in single-layer GeC does not change...
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| Format: | Article |
| Language: | English |
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Elsevier
2019-06-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379719302955 |