Dislocations penetrating an Al/Si interface
We study indentation of a nanolayered material consisting of a Si top layer above an Al substrate, using molecular dynamics simulation. We focus on the activity of Si dislocations upon reaching the interface. We find that passage of the dislocations through the interface is possible, if the slip sys...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5008886 |