THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP

THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP

Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, whichinclude: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plas...

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Bibliographic Details
Main Author: B. A. Shangereeva
Format: Article
Language:Russian
Published: Daghestan State Technical University 2016-07-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
film
hydrogen
oxygen
oxidation
material
adsorption oxidant
surface diffusion
oxide
process
semiconductors
thermal oxidation
pyrolytic deposition
adhesion and formation
Online Access:https://vestnik.dgtu.ru/jour/article/view/130

Internet

https://vestnik.dgtu.ru/jour/article/view/130

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