Neutron detection using boron gallium nitride semiconductor material
In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluat...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4868176 |