Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors

Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors

This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and...

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Bibliographic Details
Main Authors: Chih-Chiang Wu, Shyr-Long Jeng
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Crystals
Subjects:
GaN FET
MIS-HEMT
cascode
behavioral model
parasitic capacitance
turn-off resistance
SPICE
Online Access:https://www.mdpi.com/2073-4352/7/8/250

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https://www.mdpi.com/2073-4352/7/8/250

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