Design of GaN-based input harmonic control RF power amplifier

The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT...

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Bibliographic Details
Main Authors: Shao Yuwei, Tao Hongqi
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2021-04-01
Series:Dianzi Jishu Yingyong
Subjects:
Online Access:http://www.chinaaet.com/article/3000130582