Design of GaN-based input harmonic control RF power amplifier

Design of GaN-based input harmonic control RF power amplifier

The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT...

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Main Authors: Shao Yuwei, Tao Hongqi
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2021-04-01
Series:Dianzi Jishu Yingyong
Subjects:
power amplifier
input harmonic control
high efficiency
monolithic microwave integrated circuit
Online Access:http://www.chinaaet.com/article/3000130582
id doaj-462d64f4b52e4025b51e707582caca68
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spelling doaj-462d64f4b52e4025b51e707582caca682021-05-21T06:13:10ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982021-04-01474677010.16157/j.issn.0258-7998.2012473000130582Design of GaN-based input harmonic control RF power amplifierShao Yuwei0Tao Hongqi1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory，Nanjing Electronic Devices Institute， Nanjing 210016，ChinaScience and Technology on Monolithic Integrated Circuits and Modules Laboratory，Nanjing Electronic Devices Institute， Nanjing 210016，ChinaThe influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT device were carried out. According to the test results, it is found that the efficiency of the RF power amplifier can be effectively improved through the input harmonic control, and an efficiency improvement at 3～10%can be obtained in band. Based on this, an X-band single-stage monolithic microwave integrated circuit(MMIC) power amplifier was designed. After testing, the power amplifier chip has a maximum PAE at 52.88% in the range of 9.2 to 11.3 GHz.http://www.chinaaet.com/article/3000130582power amplifierinput harmonic controlhigh efficiencymonolithic microwave integrated circuit
collection DOAJ
language zho
format Article
sources DOAJ
author Shao Yuwei
Tao Hongqi
spellingShingle Shao Yuwei
Tao Hongqi
Design of GaN-based input harmonic control RF power amplifier
Dianzi Jishu Yingyong
power amplifier
input harmonic control
high efficiency
monolithic microwave integrated circuit
author_facet Shao Yuwei
Tao Hongqi
author_sort Shao Yuwei
title Design of GaN-based input harmonic control RF power amplifier
title_short Design of GaN-based input harmonic control RF power amplifier
title_full Design of GaN-based input harmonic control RF power amplifier
title_fullStr Design of GaN-based input harmonic control RF power amplifier
title_full_unstemmed Design of GaN-based input harmonic control RF power amplifier
title_sort design of gan-based input harmonic control rf power amplifier
publisher National Computer System Engineering Research Institute of China
series Dianzi Jishu Yingyong
issn 0258-7998
publishDate 2021-04-01
description The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test and harmonic balance simulation of the GaN HEMT device were carried out. According to the test results, it is found that the efficiency of the RF power amplifier can be effectively improved through the input harmonic control, and an efficiency improvement at 3～10%can be obtained in band. Based on this, an X-band single-stage monolithic microwave integrated circuit(MMIC) power amplifier was designed. After testing, the power amplifier chip has a maximum PAE at 52.88% in the range of 9.2 to 11.3 GHz.
topic power amplifier
input harmonic control
high efficiency
monolithic microwave integrated circuit
url http://www.chinaaet.com/article/3000130582
work_keys_str_mv AT shaoyuwei designofganbasedinputharmoniccontrolrfpoweramplifier
AT taohongqi designofganbasedinputharmoniccontrolrfpoweramplifier
_version_ 1721432425076097024

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