Mid-infrared emissions from In(Ga)As quantum wells grown on GaP/Si(001) substrates
This work reports on the approach of metamorphic In(Ga)As quantum wells on GaP/Si(001) substrates for Si-based mid-infrared applications. Metamorphic InP and In0.83Al0.17As templates are grown on Si, and room temperature photoluminescence emissions at 2.1 μm and 2.6 μm have been demonstrated from In...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5051062 |