Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification
Ruthenium dioxide (RuO2) is an ideal buffer layer for vanadium dioxide (VO2) heterostructures due to its high electrical conductivity and matching crystal structure with metallic VO2. VO2 thin films were deposited on single crystal TiO2 (001) substrates with RuO2 buffer layers via pulsed laser depos...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5083848 |