Control of metal-insulator transition temperature in VO2 thin films grown on RuO2/TiO2 templates by strain modification
Ruthenium dioxide (RuO2) is an ideal buffer layer for vanadium dioxide (VO2) heterostructures due to its high electrical conductivity and matching crystal structure with metallic VO2. VO2 thin films were deposited on single crystal TiO2 (001) substrates with RuO2 buffer layers via pulsed laser depos...
Main Authors: | H. Kim, N. A. Charipar, J. Figueroa, N. S. Bingham, A. Piqué |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-01-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5083848 |
Similar Items
-
Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers
by: Heungsoo Kim, et al.
Published: (2017-10-01) -
Enhancement of RuO2 Capacitive Behavior by RuO2 combining with Polyaniline
by: Ming-Han She, et al.
Published: (2013) -
Structural Evolution and Characteristics of TiO2-RuO2 Artificial Superlattice
by: Kai-Wen Cheng, et al.
Published: (2005) -
Chlorine and oxygen evolution and reduction on RuO2/TiO2 electorodes
by: Burrows, Ivan Ronald
Published: (1977) -
Synthesis and characterization of nanostructural TiO2, IrO2/TiO2 and RuO2/TiO2
by: Chi-An Chen, et al.
Published: (2009)