Experimental Verification of Triple Lobes Generation in Fractional Memristive Circuits
Recently, the triple-lobe behavior is found in the I-V characteristics of some memristive devices generating another non-zero pinchoff point. In this paper, a flux-controlled memristive model is developed to generate the triple-lobe behavior (double pinchoff points) based on a fractional second-orde...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8543141/ |