High-Pressure-Induced Transition from Ferromagnetic Semiconductor to Spin Gapless Semiconductor in Quaternary Heusler Alloy VFeScZ (Z = Sb, As, P)
In this paper, the structure and the electronic and magnetic properties of VFeScZ (Z = Sb, As, P) series alloys are systematically studied based on the Perdew−Burke−Ernzerhof (PBE) generalized gradient approximation (GGA) calculation within the first-principles density functional...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-07-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/9/14/2859 |