A Novel Method to Grow Vertically Aligned Silicon Nanowires on Si (111) and Their Optical Absorption
In this study we grew silicon nanowires (SiNWs) on Si (111) substrate by gold-catalyzed vapor liquid solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. SiNWs with 150–200 nm diameters were found to grow along the orientations of all 〈111〉 family, inc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2012-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2012/274618 |